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Standard
Power MOSFET
N-Channel Enhancement Mode
IRFP 260 V DSS
I D (cont)
R DS(on)
= 200 V
= 46 A
= 55 m ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
T J
T J
= 25 ° C to 150 ° C
= 25 ° C to 150 ° C; R GS = 1 M ?
200
200
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
D (TAB)
I D25
I DM
T C
T C
= 25 ° C
= 25 ° C, pulse width limited by T JM
46
184
A
A
I AR
E AR
T C
= 25 ° C
46
28
A
mJ
G = Gate,
S = Source,
D = Drain,
TAB = Drain
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
5
V/ns
P D
T J
T JM
T stg
T C
= 25 ° C
280
-55 ... +150
150
-55 ... +150
W
° C
° C
° C
M d
Mounting torque
1.13/10 Nm/lb.in.
Features
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
300
g
° C
? International standard package
JEDEC TO-247 AD
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? High commutating dv/dt rating
? Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
Applications
? Switch-mode and resonant-mode
V DSS
V GS = 0 V, I D = 250 μ A
200
V
power supplies
? Motor controls
V DS
V DS
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
= 200V
= 160V
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4
± 100
25
250
V
nA
μ A
μ A
? Uninterruptible Power Supplies (UPS)
? DC choppers
Advantages
? Easy to mount with 1 screw
(isolated mounting screw hole)
R DS(on)
V GS = 10 V, I D = 28 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.055
?
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
97545(1/98)
1-2
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